HF+ datasheet, cross reference, circuit and application notes in pdf format. Shenzhen Ping Sheng Electronics Co., Ltd. Part No. Description, SWITCHING REGULATOR APPLICATION. File Size, K / 2 Page. TS High Voltage NPN Transistor. 1/6. Version: D TO TO PRODUCT SUMMARY. BVCEO. V. BVCBO. V. IC. A. VCE(SAT).
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Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. Suitable for V circuit mode, fluorescent lamp, electronic ballast.
13003 Datasheet, Equivalent, Cross Reference Search
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Log into MyON to proceed. For switching power supply and other power switching circuit. High Speed Switching Structure? If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company hhf this Agreement, and your agreement to hg terms will be regarded as the agreement of such company.
Characteristic Symbol Ratings Unit Collector-base volta 1. Absolute Maximum Ratings Symbol Parameter 1. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. The transistor is subdivided ht one group according to its DC current gain. TO, Plastic Package Terminals: Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.
For AF driver and output stages?
It is intended to be used in applications requiring medium voltage capability and high switching speeds. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin 1. Suitable for V circuit mode,fluorescent lamp,electronic ballast. Nothing contained in this 1303 limits a party from filing a truthful complaint, or the party’s ability to communicate ht to, or otherwise participate in either: Previously Viewed Products Select Product They are particularly suited for and V applications in switch mode.
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Internal schematic diagram multi-epitaxial planar tec 1. Pb-Free Package is Available.
MJE A, V NPN Bipolar Power Transistor
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Rochester Contact Sales Office.
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High voltage capability,high speed switching,wide SOA. High voltage capability,high speed switching,wide soa,RoHS compliant.